C4H18W500A RF MOSFET 48V

Part Number：C4H18W500A   Manufacturer：Ampleon   Device Type：GaN (Gallium Nitride), asymmetric Doherty power transistor, 1800–2000 MHz, 500 W peak power, dedicated for 4G/5G macro base station RF final‑stage amplification.   Key Specifications (Tcase=25°C, VDS=48V, W‑CDMA/5G NR signal)   Frequency Range：1800 MHz ~ 2000 MHz (mainstream bands such as n39/n40, B39/B40) Drain Supply Voltage (VDS)：48 V (Typ.), Max 52 V (operating) / 150V (breakdown) Quiescent Current (IDq)：350 mA (Main amp, Typ.) Average Output Power (PL(AV))：83–85 W (49.2–49.3 dBm) Peak Output Power (PL(M))：500–550 W (Typ. 500 W) Power Gain (Gp)：15 dB (Typ.) Drain Efficiency (ηD)：59 % (Typ.) Adjacent Channel Power Ratio (ACPR)：−31 dBc (Typ., ≤−50 dBc after linearization) Input Return Loss (RLin)：−16 dB (Typ.) Package：SOT1258-4 (6-lead, earless flanged, air-cavity plastic) Thermal Resistance (Junction to Case)：0.17–0.19 K/W (at 80–120W power dissipation) Features：Internal pre-matching, low output capacitance…